Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Authors
Lee, Eun-HyeSong, Jin-DongHan, Il-KiChang, Soo-KyungLanger, FabianHoefling, SvenForchel, AlfredKamp, MartinKim, Jong-Su
Issue Date
2015-03-10
Publisher
SPRINGER
Citation
NANOSCALE RESEARCH LETTERS, v.10
Abstract
The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/mu m(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
Keywords
Quantum dot; Droplet epitaxy; Micro-photoluminescence; Single photon; GaAs
ISSN
1931-7573
URI
https://pubs.kist.re.kr/handle/201004/125666
DOI
10.1186/s11671-015-0826-2
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KIST Article > 2015
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