Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
- Authors
- Lee, Eun-Hye; Song, Jin-Dong; Han, Il-Ki; Chang, Soo-Kyung; Langer, Fabian; Hoefling, Sven; Forchel, Alfred; Kamp, Martin; Kim, Jong-Su
- Issue Date
- 2015-03-10
- Publisher
- SPRINGER
- Citation
- NANOSCALE RESEARCH LETTERS, v.10
- Abstract
- The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/mu m(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
- Keywords
- Quantum dot; Droplet epitaxy; Micro-photoluminescence; Single photon; GaAs
- ISSN
- 1931-7573
- URI
- https://pubs.kist.re.kr/handle/201004/125666
- DOI
- 10.1186/s11671-015-0826-2
- Appears in Collections:
- KIST Article > 2015
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