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dc.contributor.authorJeon, Pyo Jin-
dc.contributor.authorMin, Sung-Wook-
dc.contributor.authorKim, Jin Sung-
dc.contributor.authorRaza, Syed Raza Ali-
dc.contributor.authorChoi, Kyunghee-
dc.contributor.authorLee, Hee Sung-
dc.contributor.authorLee, Young Tack-
dc.contributor.authorHwang, Do Kyung-
dc.contributor.authorChoi, Hyoung Joon-
dc.contributor.authorIm, Seongil-
dc.date.accessioned2024-01-20T07:33:35Z-
dc.date.available2024-01-20T07:33:35Z-
dc.date.created2021-09-04-
dc.date.issued2015-03-
dc.identifier.issn2050-7526-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/125735-
dc.description.abstractTwo-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p-and n-type semiconductors were fabricated on both glass and SiO2/p(+)-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectBIAS LEAKAGE CURRENT-
dc.subjectSURFACE-CHEMISTRY-
dc.subjectLAYER MOS2-
dc.subjectWSE2-
dc.subjectGATE-
dc.subjectTRANSISTORS-
dc.subjectMONOLAYERS-
dc.titleEnhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation-
dc.typeArticle-
dc.identifier.doi10.1039/c4tc02961e-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS CHEMISTRY C, v.3, no.12, pp.2751 - 2758-
dc.citation.titleJOURNAL OF MATERIALS CHEMISTRY C-
dc.citation.volume3-
dc.citation.number12-
dc.citation.startPage2751-
dc.citation.endPage2758-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000351459300005-
dc.identifier.scopusid2-s2.0-84924873506-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusBIAS LEAKAGE CURRENT-
dc.subject.keywordPlusSURFACE-CHEMISTRY-
dc.subject.keywordPlusLAYER MOS2-
dc.subject.keywordPlusWSE2-
dc.subject.keywordPlusGATE-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordPlusMONOLAYERS-
dc.subject.keywordAuthorWSe2-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorvan der Waals junction p?n diode-
dc.subject.keywordAuthorfluoropolymer encapsulation-
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