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dc.contributor.authorJo, Jeong-Wan-
dc.contributor.authorKim, Jaekyun-
dc.contributor.authorKim, Kyung-Tae-
dc.contributor.authorKang, Jin-Gu-
dc.contributor.authorKim, Myung-Gil-
dc.contributor.authorKim, Kwang-Ho-
dc.contributor.authorKo, Hyungduk-
dc.contributor.authorKim, Yong-Hoon-
dc.contributor.authorPark, Sung Kyu-
dc.date.accessioned2024-01-20T07:34:07Z-
dc.date.available2024-01-20T07:34:07Z-
dc.date.created2021-09-05-
dc.date.issued2015-02-18-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/125757-
dc.description.abstractIncorporation of Zr into an AlOx matrix generates an intrinsically activated ZAO surface enabling the formation of a stable semiconducting IGZO film and good interfacial properties. Photochemically annealed metal-oxide devices and circuits with the optimized sol-gel ZAO dielectric and IGZO semiconductor layers demonstrate the high performance and electrically/mechanically stable operation of flexible electronics fabricated via a low-temperature solution process.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectLOW-TEMPERATURE FABRICATION-
dc.subjectGATE DIELECTRICS-
dc.subjectROOM-TEMPERATURE-
dc.subjectPERFORMANCE-
dc.subjectSUBSTRATE-
dc.subjectCIRCUITS-
dc.subjectROUTE-
dc.subjectTFTS-
dc.titleHighly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201404296-
dc.description.journalClass1-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.27, no.7, pp.1182 - 1188-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume27-
dc.citation.number7-
dc.citation.startPage1182-
dc.citation.endPage1188-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000350057400004-
dc.identifier.scopusid2-s2.0-84923046301-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusLOW-TEMPERATURE FABRICATION-
dc.subject.keywordPlusGATE DIELECTRICS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusSUBSTRATE-
dc.subject.keywordPlusCIRCUITS-
dc.subject.keywordPlusROUTE-
dc.subject.keywordPlusTFTS-
dc.subject.keywordAuthorDeep UV photo-chemical activation-
dc.subject.keywordAuthorFlexible metal oxide gate dielectric-
dc.subject.keywordAuthorLow temperature-
dc.subject.keywordAuthorRollable metal oxide TFT-
dc.subject.keywordAuthorSolution process-
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