Band gap grading and photovoltaic performance of solution-processed Cu(In,Ga)S-2 thin-film solar cells

Authors
Sohn, So HyeongHan, Noh SooPark, Yong JinPark, Seung MinAn, Hee SangKim, Dong-WookMin, Byoung KounSong, Jae Kyu
Issue Date
2014-12
Publisher
ROYAL SOC CHEMISTRY
Citation
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.16, no.48, pp.27112 - 27118
Abstract
The photophysical properties of Culn(x)Ga(1-x)S(2) (CIGS) thin films, prepared by solution-based coating methods, are investigated to understand the correlation between the optical properties of these films and the electrical characteristics of solar cells fabricated using these films. Photophysical properties, such as the depth-dependent band gap and carrier lifetime, turn out to be at play in determining the energy conversion efficiency of solar cells. A double grading of the band gap in CIGS films enhances solar cell efficiency, even when defect states disturb carrier collection by non-radiative decay. The combinational stacking of different density films leads to improved solar cell performance as well as efficient fabrication because a graded band gap and reduced shunt current increase carrier collection efficiency. The photodynamics of minority-carriers suggests that the suppression of defect states is a primary area of improvement in CIGS thin films prepared by solution-based methods.
Keywords
LOW-COST; PHOTOLUMINESCENCE; CUINSE2; CHALCOPYRITES; SIZE; LOW-COST; PHOTOLUMINESCENCE; CUINSE2; CHALCOPYRITES; SIZE; CIGS; thin film solar cells; band-gap; grading
ISSN
1463-9076
URI
https://pubs.kist.re.kr/handle/201004/126028
DOI
10.1039/c4cp03243h
Appears in Collections:
KIST Article > 2014
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