Microstructure and Properties of Silicon-Incorporated DLC Film Fabricated Using HMDS Gas and RF-PECVD Process

Abstract

The microstructure and characteristics of silicon-incorporated diamond-like carbon film, fabricated using a radio-frequency plasma-enhanced chemical vapor deposition process with hexamethyldisilane [(CH3)(3)Si center dot Si(CH3)(3):HMDS] gas as a silicon source, were investigated. Diamond-like carbon films with silicon compositions from 0 to 5 atomic percent were deposited onto ultra-fine grained AZ31 magnesium alloy substrate as buffer layers or multilayers. Si doping led not only to an increase in the bonding ratio (sp(3)/sp(2)), but improvements in hardness, critical adhesion, and corrosion resistance. Out of the investigated samples, the multi-deposited silicon diamond-like carbon thin film on magnesium substrate showed the best combination of adhesive, wear resistance, and corrosion resistance properties.