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dc.contributor.authorPark, M. S.-
dc.contributor.authorJain, V.-
dc.contributor.authorLee, E. H.-
dc.contributor.authorKim, S. H.-
dc.contributor.authorPettersson, H.-
dc.contributor.authorWang, Q.-
dc.contributor.authorSong, J. D.-
dc.contributor.authorChoi, W. J.-
dc.date.accessioned2024-01-20T08:31:47Z-
dc.date.available2024-01-20T08:31:47Z-
dc.date.created2021-09-02-
dc.date.issued2014-11-06-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/126130-
dc.description.abstractHigh-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleInAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K-
dc.typeArticle-
dc.identifier.doi10.1049/el.2014.2437-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.50, no.23, pp.1731 - 1732-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume50-
dc.citation.number23-
dc.citation.startPage1731-
dc.citation.endPage1732-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000344942600045-
dc.identifier.scopusid2-s2.0-84912136838-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalResearchAreaEngineering-
dc.type.docTypeArticle-
dc.subject.keywordAuthormillimetre wave integrated circuits-
dc.subject.keywordAuthorpower combiners-
dc.subject.keywordAuthortransmission lines-
dc.subject.keywordAuthormillimetre-wave broadband waveguide based power combiner-
dc.subject.keywordAuthorlossy waveguide-based power combiner-
dc.subject.keywordAuthorlossy planar transmission lines-
dc.subject.keywordAuthorreflection coefficients-
dc.subject.keywordAuthormillimetre-wave broadband high solid-state power-
dc.subject.keywordAuthorfrequency 26-
dc.subject.keywordAuthor5 GHz to 40 GHz-
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