Cu-In-Ga-S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

Authors
Kim, Jong-HoonLee, Ki-HeonJo, Dae-YeonLee, YangjinHwang, Jun YeonYang, Heesun
Issue Date
2014-09-29
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.105, no.13
Abstract
Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu-In1-x-Ga-x-S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement. (C) 2014 AIP Publishing LLC.
Keywords
SEMICONDUCTOR NANOCRYSTALS; CUINS2 NANOCRYSTALS; HIGH-EFFICIENCY; ELECTROLUMINESCENCE; ENERGIES; SEMICONDUCTOR NANOCRYSTALS; CUINS2 NANOCRYSTALS; HIGH-EFFICIENCY; ELECTROLUMINESCENCE; ENERGIES; hybrid interface; LED; quantum dot; TEM
ISSN
0003-6951
URI
https://pubs.kist.re.kr/handle/201004/126329
DOI
10.1063/1.4896911
Appears in Collections:
KIST Article > 2014
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