Dielectric functions and interband transitions of InxAl1 (-) P-x alloys

Abstract

We report pseudodielectric functions <epsilon> from 1.5 to 6.0 eV of InxAl1 (-) P-x ternary alloy films. Data were obtained by spectroscopic ellipsometry on 1.2 mu m thick films grown on (001) GaAs substrates by molecular beam epitaxy. Artifacts were minimized by real-time assessment of overlayer removal, leading to accurate representations of the bulk dielectric responses of these materials. Critical-point (CP) energies were obtained from numerically calculated second energy derivatives, and their Brillouin-zone origins identified by band-structure calculations using the linear augmented Slater-type orbital method. (C) 2014 Elsevier B.V. All rights reserved.