Electroless Chemical Grafting of Nitrophenyl Groups on n-Doped Hydrogenated Amorphous Silicon Surfaces

Authors
Kim, ChulkiOh, KiwonHan, SeungheeKim, KyungkonKim, Il WonKim, Heesuk
Issue Date
2014-08
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.8, pp.6309 - 6313
Abstract
The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si: H) surfaces without external ultraviolet, thermal, or electrochemical energy was investigated. Clean n-doped a-Si: H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si: H thin film with PNBD self-terminates without polymerization after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2x10(15)/cm(2). These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si: H thin films is an attractive pathway toward forming interfaces between a-Si: H and organic layers under ambient conditions.
Keywords
DIAZONIUM SALTS; ELECTROCHEMICAL REDUCTION; COVALENT MODIFICATION; CRYSTALLINE SILICON; VAPOR-DEPOSITION; ORGANIC LAYERS; CARBON; MONOLAYERS; FUNCTIONALIZATION; STABILIZATION; DIAZONIUM SALTS; ELECTROCHEMICAL REDUCTION; COVALENT MODIFICATION; CRYSTALLINE SILICON; VAPOR-DEPOSITION; ORGANIC LAYERS; CARBON; MONOLAYERS; FUNCTIONALIZATION; STABILIZATION; Amorphous Silicon Surface; Organic Monolayer; Spontaneous Reaction; XPS
ISSN
1533-4880
URI
https://pubs.kist.re.kr/handle/201004/126526
DOI
10.1166/jnn.2014.8449
Appears in Collections:
KIST Article > 2014
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE