Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seung-Hwan | - |
dc.contributor.author | Kim, Hong-Ki | - |
dc.contributor.author | Kang, Min-Gyu | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Lee, Sung-Gap | - |
dc.contributor.author | Lee, Young-Hie | - |
dc.contributor.author | Yoon, Jung-Rag | - |
dc.date.accessioned | 2024-01-20T09:31:41Z | - |
dc.date.available | 2024-01-20T09:31:41Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2014-07 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/126623 | - |
dc.description.abstract | A formed device embedded-type 0402 sized (Ca0.7Sr0.3)(Zr0.8Ti0.2)O-3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (-55 degrees C-125 degrees C, delta C/C = +/- 30 ppm/degrees C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 Omega and 62.39 mu H, respectively. The leakage current density was 0.78 mu A/cm(2) at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DIELECTRIC-PROPERTIES | - |
dc.subject | FOWLER-NORDHEIM | - |
dc.title | Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O-3 Thin Film Applied to Embedded Decoupling Capacitors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2014.2320295 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.35, no.7, pp.777 - 779 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 35 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 777 | - |
dc.citation.endPage | 779 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000338662100030 | - |
dc.identifier.scopusid | 2-s2.0-84903618460 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalResearchArea | Engineering | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
dc.subject.keywordPlus | FOWLER-NORDHEIM | - |
dc.subject.keywordAuthor | CSZT | - |
dc.subject.keywordAuthor | embedded capacitor | - |
dc.subject.keywordAuthor | FDE | - |
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