Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Sathyamoorthy, R. | - |
dc.contributor.author | Abhirami, K. M. | - |
dc.contributor.author | Gokul, B. | - |
dc.contributor.author | Gautam, Sanjeev | - |
dc.contributor.author | Chae, Keun Hwa | - |
dc.contributor.author | Asokan, K. | - |
dc.date.accessioned | 2024-01-20T09:31:57Z | - |
dc.date.available | 2024-01-20T09:31:57Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2014-07 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/126637 | - |
dc.description.abstract | Present study demonstrates the feasibility of using oxides of Sn to fabricate the p-n junction diode and reports the device characteristics. Reactive thermal evaporation method was used to fabricate the p-type SnO and n-type SnO2 multilayer thin films. The x-ray diffraction (XRD) and Raman spectra depict the presence of both SnO and SnO2 layers. The interface of the p-n junction analyzed by cross-sectional transmission electron microscope (TEM) images and selected area electron diffraction (SAED) pattern confirmed the presence of SnO-SnO2 layers. The diode shows rectifying current-voltage characteristics with forward threshold voltage of 3.5 V. | - |
dc.language | English | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject | TIN OXIDE | - |
dc.subject | ZNO | - |
dc.subject | EVAPORATION | - |
dc.subject | ELECTRODES | - |
dc.subject | SENSORS | - |
dc.subject | RAMAN | - |
dc.subject | SNO2 | - |
dc.title | Fabrication of p-n Junction Diode Using SnO/SnO2 Thin Films and Its Device Characteristics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s13391-013-3297-6 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.10, no.4, pp.743 - 747 | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 743 | - |
dc.citation.endPage | 747 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.identifier.kciid | ART001897727 | - |
dc.identifier.wosid | 000339642600009 | - |
dc.identifier.scopusid | 2-s2.0-84905406583 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject.keywordPlus | TIN OXIDE | - |
dc.subject.keywordPlus | ZNO | - |
dc.subject.keywordPlus | EVAPORATION | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | SENSORS | - |
dc.subject.keywordPlus | RAMAN | - |
dc.subject.keywordPlus | SNO2 | - |
dc.subject.keywordAuthor | SnO/SnO2 diode | - |
dc.subject.keywordAuthor | raman analysis | - |
dc.subject.keywordAuthor | TEM | - |
dc.subject.keywordAuthor | thermal evaporation | - |
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