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dc.contributor.authorSathyamoorthy, R.-
dc.contributor.authorAbhirami, K. M.-
dc.contributor.authorGokul, B.-
dc.contributor.authorGautam, Sanjeev-
dc.contributor.authorChae, Keun Hwa-
dc.contributor.authorAsokan, K.-
dc.date.accessioned2024-01-20T09:31:57Z-
dc.date.available2024-01-20T09:31:57Z-
dc.date.created2021-09-05-
dc.date.issued2014-07-
dc.identifier.issn1738-8090-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/126637-
dc.description.abstractPresent study demonstrates the feasibility of using oxides of Sn to fabricate the p-n junction diode and reports the device characteristics. Reactive thermal evaporation method was used to fabricate the p-type SnO and n-type SnO2 multilayer thin films. The x-ray diffraction (XRD) and Raman spectra depict the presence of both SnO and SnO2 layers. The interface of the p-n junction analyzed by cross-sectional transmission electron microscope (TEM) images and selected area electron diffraction (SAED) pattern confirmed the presence of SnO-SnO2 layers. The diode shows rectifying current-voltage characteristics with forward threshold voltage of 3.5 V.-
dc.languageEnglish-
dc.publisherKOREAN INST METALS MATERIALS-
dc.subjectTRANSPARENT CONDUCTING OXIDES-
dc.subjectTIN OXIDE-
dc.subjectZNO-
dc.subjectEVAPORATION-
dc.subjectELECTRODES-
dc.subjectSENSORS-
dc.subjectRAMAN-
dc.subjectSNO2-
dc.titleFabrication of p-n Junction Diode Using SnO/SnO2 Thin Films and Its Device Characteristics-
dc.typeArticle-
dc.identifier.doi10.1007/s13391-013-3297-6-
dc.description.journalClass1-
dc.identifier.bibliographicCitationELECTRONIC MATERIALS LETTERS, v.10, no.4, pp.743 - 747-
dc.citation.titleELECTRONIC MATERIALS LETTERS-
dc.citation.volume10-
dc.citation.number4-
dc.citation.startPage743-
dc.citation.endPage747-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001897727-
dc.identifier.wosid000339642600009-
dc.identifier.scopusid2-s2.0-84905406583-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusTRANSPARENT CONDUCTING OXIDES-
dc.subject.keywordPlusTIN OXIDE-
dc.subject.keywordPlusZNO-
dc.subject.keywordPlusEVAPORATION-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusRAMAN-
dc.subject.keywordPlusSNO2-
dc.subject.keywordAuthorSnO/SnO2 diode-
dc.subject.keywordAuthorraman analysis-
dc.subject.keywordAuthorTEM-
dc.subject.keywordAuthorthermal evaporation-
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KIST Article > 2014
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