Binder-Free Cu-In Alloy Nanoparticles Precursor and Their Phase Transformation to Chalcogenides for Solar Cell Applications

Authors
Lim, Ye SeulJeong, JeunghyunKim, Jin YoungKo, Min JaeKim, HonggonKim, BongSooJeong, UnyongLee, Doh-Kwon
Issue Date
2013-06-13
Publisher
American Chemical Society
Citation
The Journal of Physical Chemistry C, v.117, no.23, pp.11930 - 11940
Abstract
A low-cost, nonvacuum fabrication route for CuInSe2 and CuInS2 thin films is presented. To produce these films, binder-free colloidal precursors were prepared using Cu-In intermetallic nanoparticles that were synthesized via a chemical reduction method. The Cu-In alloy precursor films were transformed to CuInSe2 and CuInS2 by reactive annealing in chalcogen-containing atmospheres at atmospheric pressure. The as-synthesized nanoparticles and the annealed films were characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, energy dispersive X-ray spectrometry, electron probe X-ray micro-analysis, Raman spectroscopy, and Auger electron spectroscopy depth profile measurements to elucidate the phase evolution pathway and the densification mechanism of the Cu-In-Se-S system. Solar cell devices made with CuInSe2 and CuInS2 absorbing layers exhibited power conversion efficiencies of 3.92% and 2.28%, respectively. A comparison of the devices suggested that the microstructure of the absorbing layer had a greater influence on the overall photovoltaic performance than the band gap energy. A diode analysis on the solar cell devices revealed that the high saturation current density and diode ideality factor caused lower open-circuit voltages than would be expected from the band gap energies. However, the diode analysis combined with the microstructural and compositional analysis offered guidance about how to improve the photovoltaic performance of these devices.
Keywords
CUINS2 THIN-FILMS; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; NANOCRYSTAL INKS; INDIUM; EFFICIENCY; NONVACUUM; CHALCOPYRITES; FABRICATION; DEPOSITION; CUINS2 THIN-FILMS; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; NANOCRYSTAL INKS; INDIUM; EFFICIENCY; NONVACUUM; CHALCOPYRITES; FABRICATION; DEPOSITION; CISe; thin film solar cell; non-vacuum process; printing; colloidal precursor
ISSN
1932-7447
URI
https://pubs.kist.re.kr/handle/201004/127965
DOI
10.1021/jp401637b
Appears in Collections:
KIST Article > 2013
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE