Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Yun, Jin-Mun | - |
dc.contributor.author | Noh, Yong-Jin | - |
dc.contributor.author | Yeo, Jun-Seok | - |
dc.contributor.author | Go, Yeong-Jin | - |
dc.contributor.author | Na, Seok-In | - |
dc.contributor.author | Jeong, Hyung-Gu | - |
dc.contributor.author | Kim, Juhwan | - |
dc.contributor.author | Lee, Sehyun | - |
dc.contributor.author | Kim, Seok-Soon | - |
dc.contributor.author | Koo, Hye Young | - |
dc.contributor.author | Kim, Tae-Wook | - |
dc.contributor.author | Kim, Dong-Yu | - |
dc.date.accessioned | 2024-01-20T12:30:16Z | - |
dc.date.available | 2024-01-20T12:30:16Z | - |
dc.date.created | 2021-09-01 | - |
dc.date.issued | 2013-06 | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/128041 | - |
dc.description.abstract | The work-function of MoS2 interfacial layers can be efficiently modulated by p-and n-doping treatments. As a result, the PCE of devices with a p-doped MoS2-based HTL is increased from similar to 2.8 to similar to 3.4%. Particularly, after n-doping the PCE was dramatically increased due to the change in work-function compared with un-doped MoS2 thin-films. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | METAL DICHALCOGENIDE NANOSHEETS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | TO-ROLL FABRICATION | - |
dc.subject | GRAPHENE OXIDE | - |
dc.title | Efficient work-function engineering of solution-processed MoS2 thin-films for novel hole and electron transport layers leading to high-performance polymer solar cells | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c3tc30504j | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.24, pp.3777 - 3783 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 1 | - |
dc.citation.number | 24 | - |
dc.citation.startPage | 3777 | - |
dc.citation.endPage | 3783 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000319745400002 | - |
dc.identifier.scopusid | 2-s2.0-84878737270 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | METAL DICHALCOGENIDE NANOSHEETS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TO-ROLL FABRICATION | - |
dc.subject.keywordPlus | GRAPHENE OXIDE | - |
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