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dc.contributor.authorAn, C. S.-
dc.contributor.authorJang, Y. D.-
dc.contributor.authorLee, H.-
dc.contributor.authorLee, D.-
dc.contributor.authorSong, J. D.-
dc.contributor.authorChoi, W. J.-
dc.date.accessioned2024-01-20T12:30:49Z-
dc.date.available2024-01-20T12:30:49Z-
dc.date.created2021-09-04-
dc.date.issued2013-05-07-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/128066-
dc.description.abstractWetting layer (WL) photoluminescence (PL) at 10K dominated the PL spectra of low-density quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), even at very low excitation powers. Long PL rise time at the ground state (GS) of QDs was observed, when carriers are generated in the WL, indicating suppressed carrier capture from the WL into the QDs. Fluctuations in the WL thickness due to WL thinning in the MEE-grown QDs produced strong localization effects. Temperature dependence of the WL PL intensity and the GS PL rise time agreed well with this interpretation. (C) 2013 AIP Publishing LLC.-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectTEMPERATURE-
dc.subjectDEPOSITION-
dc.titleDelayed emission from InGaAs/GaAs quantum dots grown by migration-enhanced epitaxy due to carrier localization in a wetting layer-
dc.typeArticle-
dc.identifier.doi10.1063/1.4803493-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.113, no.17-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume113-
dc.citation.number17-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000319292800334-
dc.identifier.scopusid2-s2.0-84877724684-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusDEPOSITION-
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