Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chong, Eugene | - |
dc.contributor.author | Kang, Iljoon | - |
dc.contributor.author | Park, Chul Hong | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2024-01-20T12:30:58Z | - |
dc.date.available | 2024-01-20T12:30:58Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2013-05-01 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/128074 | - |
dc.description.abstract | We find that an incorporation of the small amount of Si in the ZnSnO stabilizes the device performance significantly. Through the first-principle calculation, we find that the formation of O-deficient states is easily suppressed by Si-doping due to the volume shrinkage effect, which leads to the stable device operation. This behavior is consistent with the X-ray photoelectron spectroscopy measured data. (C) 2013 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.subject | GAAS | - |
dc.title | First-principle study of amorphous SiZnSnO thin-film transistor with excellent stability | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.tsf.2013.02.033 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.534, pp.609 - 613 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 534 | - |
dc.citation.startPage | 609 | - |
dc.citation.endPage | 613 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000317736700102 | - |
dc.identifier.scopusid | 2-s2.0-84876695304 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | In-free | - |
dc.subject.keywordAuthor | Mobility | - |
dc.subject.keywordAuthor | Stability | - |
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