Structural Characteristics of Ternary InxGa1-xAs Nanowires on Si (111) Grown via Au-Catalyzed VLS

Abstract

We have characterized the structural properties of the ternary InxGa1-xAs nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the InxGa1-xAs NW array grown under optimized condition exceeds 1 x 10(8)/cm(2). X-ray diffraction (XRD) spectra confirm the In composition (x = 0.9-0.3) of the InxGa1-xAs nanowires which bandgap energy can cover the entire near-infrared (NIR) range. Massive stacking faults and twin planes were observed but no misfit dislocation was found along the NWs as confirmed by transmission electron microscopy (TEM). The energy-dispersive X-ray spectroscopy (EDS) analysis shows the gradual variation of In composition along the NW.