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dc.contributor.authorNo, Young Soo-
dc.contributor.authorPark, Dong-Hee-
dc.contributor.authorLee, Jeon-Kook-
dc.contributor.authorLee, Youn-Seoung-
dc.contributor.authorKim, Tae Whan-
dc.contributor.authorChoi, Won-Kook-
dc.date.accessioned2024-01-20T12:32:04Z-
dc.date.available2024-01-20T12:32:04Z-
dc.date.created2021-09-04-
dc.date.issued2013-05-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/128132-
dc.description.abstractThe effect of electrode materials on resistance switching was evaluated on the Pt/NiO/electrode (EL) structures where the EL contacts were Pt, Al, and indium-tin-oxide (ITO). It was confirmed that ohmic Pt contact needs to induce the effective electric field for resistance switching across the NiO film. For the Pt/NiO/Al structure, the barrier height of the Al Schottky contact was measured as 0.66 eV and no resistance switching was observed owing to a large voltage drop at the rectifying interface induced by the reduction of NiO resulting from the formation of Al oxide. In the ITO (EL)/NiO/Pt structure, the barrier height of the Schottky contact between ITO and NiO was about 0.52 eV and it did not show any resistance switching, either. Through the depth-profile study by X-ray photoelectron spectroscopy, chemical reactions at the interface ITO/NiO was identified to be not too much evolved compared with that of NiO/Al, which might due to be abundant oxygen on the ITO surface. Such Schottky barrier heights 0.52-0.66 eV were considered too high to induce a sufficient electric field in the NiO film causing the resistance switching. (c) 2013 The Japan Society of Applied Physics-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.subjectELECTRODE DEPENDENCE-
dc.subjectTHIN-FILMS-
dc.subjectGROWTH-
dc.titleEffect of Indium-Tin-Oxide Schottky Contact on the Resistance Switching of NiO Film-
dc.typeArticle-
dc.identifier.doi10.7567/JJAP.52.051102-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.5-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.volume52-
dc.citation.number5-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000319993800009-
dc.identifier.scopusid2-s2.0-84880905686-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusELECTRODE DEPENDENCE-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusGROWTH-
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