Enhanced mechanical properties of silanized silica nanoparticle attached graphene oxide/epoxy composites

Authors
Jiang, TongwuKuila, TapasKim, Nam HoonKu, Bon-CheolLee, Joong Hee
Issue Date
2013-04-18
Publisher
ELSEVIER SCI LTD
Citation
COMPOSITES SCIENCE AND TECHNOLOGY, v.79, pp.115 - 125
Abstract
The toughening effects of 3-aminopropyltriethoxysilane (APTES) functionalized silica nanoparticles attached graphene oxide (ATGO) in epoxy were investigated. Fourier transform infrared and X-ray photoelectron spectroscopy analysis confirmed chemical functionalization and partial reduction of GO during the functionalization. The nanostructures of GO and ATGO were observed by transmission electron microscopy. The tensile strength and modulus of 1 wt.% ATGO-filled epoxy composites at cryogenic temperature (Cr) were 29.2% and 22.0% higher than those of pure epoxy. Interestingly, both the tensile strength and modulus of all the composites at CT were significantly higher than those at room temperature (RT). In contrast, impact strength of the composites at RT was higher than that at CT due to the restricted molecular mobility of epoxy. The fracture toughness (K-IC) obtained from the single edge notched bending (SENB) test increased sharply with an increase in ATGO loading in the epoxy up to 1 wt.%. The fracture surfaces of the composites analyzed through field emission scanning electron microscopy (FE-SEM) shown the rough surfaces confirming the enhanced impact and tensile properties of the ATGO filled composites. (C) 2013 Elsevier Ltd. All rights reserved.
Keywords
TOUGHENED EPOXY-RESIN; AQUEOUS DISPERSIONS; FRACTURE-TOUGHNESS; OXIDE; NANO; NANOCOMPOSITES; MORPHOLOGY; REDUCTION; BEHAVIORS; PARTICLES; TOUGHENED EPOXY-RESIN; AQUEOUS DISPERSIONS; FRACTURE-TOUGHNESS; OXIDE; NANO; NANOCOMPOSITES; MORPHOLOGY; REDUCTION; BEHAVIORS; PARTICLES; Interfacial strength; Mechanical properties; Photoelectron spectroscopy (XPS); Thermogravimetric analysis (TGA)
ISSN
0266-3538
URI
https://pubs.kist.re.kr/handle/201004/128154
DOI
10.1016/j.compscitech.2013.02.018
Appears in Collections:
KIST Article > 2013
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