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dc.contributor.authorPark, Youn Ho-
dc.contributor.authorShin, Sang-Hoon-
dc.contributor.authorSong, Jin Dong-
dc.contributor.authorChang, Joonyeon-
dc.contributor.authorHan, Suk Hee-
dc.contributor.authorChoi, Heon-Jin-
dc.contributor.authorKoo, Hyun Cheol-
dc.date.accessioned2024-01-20T12:33:53Z-
dc.date.available2024-01-20T12:33:53Z-
dc.date.created2021-09-01-
dc.date.issued2013-04-
dc.identifier.issn0038-1101-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/128222-
dc.description.abstractThe gate voltage dependence of the Rashba effect in a p-type quantum well was investigated by using Shubnikov-de Haas measurements. The GaSb-based p-type quantum well has a large Rashba spin-orbit interaction parameter of 1.71 x 10(-11) eVm for a zero gate voltage and exhibits gate controllability. We also propose a complementary logic device using n- and p-type spin transistors that simultaneously utilize charge and spin currents to improve the signal margin. (C) 2013 Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subject2-DIMENSIONAL ELECTRON-GAS-
dc.subjectEFFECTIVE-MASS-
dc.subjectSPIN-
dc.subjectFIELD-
dc.titleGate voltage control of the Rashba effect in a p-type GaSb quantum well and application in a complementary device-
dc.typeArticle-
dc.identifier.doi10.1016/j.sse.2013.01.016-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID-STATE ELECTRONICS, v.82, pp.34 - 37-
dc.citation.titleSOLID-STATE ELECTRONICS-
dc.citation.volume82-
dc.citation.startPage34-
dc.citation.endPage37-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000317701500008-
dc.identifier.scopusid2-s2.0-84874674025-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlus2-DIMENSIONAL ELECTRON-GAS-
dc.subject.keywordPlusEFFECTIVE-MASS-
dc.subject.keywordPlusSPIN-
dc.subject.keywordPlusFIELD-
dc.subject.keywordAuthorRashba effect-
dc.subject.keywordAuthorGaSb p-type quantum well-
dc.subject.keywordAuthorComplementary device-
dc.subject.keywordAuthorSpin transistor-
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