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dc.contributor.authorKim, Byung-Hyun-
dc.contributor.authorKim, Gyubong-
dc.contributor.authorPark, Kihoon-
dc.contributor.authorShin, Mincheol-
dc.contributor.authorChung, Yong-Chae-
dc.contributor.authorLee, Kwang-Ryeol-
dc.date.accessioned2024-01-20T13:02:12Z-
dc.date.available2024-01-20T13:02:12Z-
dc.date.created2022-01-25-
dc.date.issued2013-02-
dc.identifier.issn0021-8979-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/128380-
dc.description.abstractA multi-scale approach connecting the atomistic process simulations to the device-level simulations has been applied to the Si(100)/SiO2 interface system. The oxidation of Si(100) surface was simulated by the atomic level molecular dynamics, the electronic structure of the resultant Si/suboxide/SiO2 interface was then obtained by the first-principles calculations, and finally, the leakage currents through the SiO2 gate dielectric were evaluated, with the obtained interface model, by the non-equilibrium Green's function method. We have found that the suboxide layers play a significant role for the electronic properties of the interface system and hence the leakage currents through the gate dielectric. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791706]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleEffects of suboxide layers on the electronic properties of Si(100)/SiO2 interfaces: Atomistic multi-scale approach-
dc.typeArticle-
dc.identifier.doi10.1063/1.4791706-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF APPLIED PHYSICS, v.113, no.7-
dc.citation.titleJOURNAL OF APPLIED PHYSICS-
dc.citation.volume113-
dc.citation.number7-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000315262800025-
dc.identifier.scopusid2-s2.0-84874608938-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
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KIST Article > 2013
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