Crystallinity-Controlled Naphthalene-alt-diketopyrrolopyrrole Copolymers for High-Performance Ambipolar Field Effect Transistors

Authors
Lee, Hyo-SangLee, Joong SukCho, SanghyeokKim, HyunjungKwak, Kyung-WonYoon, YoungwoonSon, Seon KyoungKim, HonggonKo, Min JaeLee, Doh-KwonKim, Jin YoungPark, SungnamChoi, Dong HoonOh, Se YoungCho, Jeong HoKim, BongSoo
Issue Date
2012-12-20
Publisher
American Chemical Society
Citation
The Journal of Physical Chemistry C, v.116, no.50, pp.26204 - 26213
Abstract
We report high-performance of ambipolar organic field-effect transistors (FETs) based on the low band gap copolymers of pDPPT2NAP-HD and pDPPT2NAP-OD. The polymers are composed of electron-rich 2,6-di(thienyl)naphthalene (T2NAP) and electron-deficient diketopyrrolopyrrole (DPP) units with branched alkyl chains of 2-hexyldecyl (HD) or 2-octyldodecyl (OD). The polymers were polymerized via Suzuki coupling, yielding optical band gaps of similar to 1.4 eV. In the transistor performance test, we observed good ambipolar transport behavior in both polymer films, and pDPPT2NAP-OD displayed hole and electron mobilities 1 order of magnitude higher than the corresponding properties of pDPPT2NAP-HD. Thermal annealing of the polymer films increased the carrier mobilities. Annealing at 150 degrees C provided optimal conditions yielding saturated film crystallinity and maximized carrier mobility. The highest hole and electron mobilities achieved in these polymers were 1.3 and 0.1 cm(2)/(V s), respectively, obtained from pDPPT2NAP-OD. The polymer structure and thermal annealing affected the carrier mobility, and this effect was investigated by fully characterizing the polymer films by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), and transmission electron microscopy (TEM) experiments. The GLXD data revealed that both polymers formed highly crystalline films with edge-on orientation. pDPPT2NAP-OD, which included longer alkyl chains, showed a higher tendency to form long-range order among the polymer chains. Thermal annealing up to 150 degrees C improved the polymer film crystallinity and promoted the formation of longer-range lamellar structures. AFM and TEM images of the films were consistent with the GI-XD data. Theoretical calculations of the polymer structures provided a rationale for the relationship between the torsional angle between aromatic rings and the carrier mobility. From the intensive electrical measurements and full characterizations, we find that the chemical structure of polymer backbone and side alkyl chain has a profound effect on film crystallinity, morphology, and transistor properties.
Keywords
HIGH-MOBILITY; N-CHANNEL; SEMICONDUCTING POLYMERS; HOLE MOBILITY; ELECTRON; DESIGN; STABILITY; TRANSPORT; CIRCUITS; PACKING; HIGH-MOBILITY; N-CHANNEL; SEMICONDUCTING POLYMERS; HOLE MOBILITY; ELECTRON; DESIGN; STABILITY; TRANSPORT; CIRCUITS; PACKING; Polymer field-effect transistors; Low band gap polymers; Ambipolar transistors; Crystalline structure; High carrier mobility
ISSN
1932-7447
URI
https://pubs.kist.re.kr/handle/201004/128537
DOI
10.1021/jp309213h
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KIST Article > 2012
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