Transparent p-NiO/n-ZnO diodes used in circuit rectifiers

Authors
Bae, HeesunLee, Kyung HaLee, Kwang H.Song, Jong HanIm, Seongil
Issue Date
2012-12
Publisher
WILEY-V C H VERLAG GMBH
Citation
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.12, pp.475 - 477
Abstract
We report on the fabrication of a transparent photostable cell circuit composed of drive and resistor diodes which are face-to-face connected to each other with different device area. The diodes consisted of e-beam evaporated p-NiO on sputter-deposited n-ZnO for p/n diode formation on indium-tin-oxide glass. Our transparent diodes show photostable rectifying behavior, about 103 on/off current ratio and even dynamic rectification at a maximum frequency of 100 Hz AC input signal in ambient light. The noticeable photo-responsivity of the circuit was obtained only under ultraviolet (UV) light. We conclude that our transparent diode circuit is promising in enriching the field of transparent device electronics. ((c) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords
THIN-FILM TRANSISTORS; NiO; ZnO; junction diodes; transparent oxides; rectification
ISSN
1862-6254
URI
https://pubs.kist.re.kr/handle/201004/128568
DOI
10.1002/pssr.201206420
Appears in Collections:
KIST Article > 2012
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