Fabrication of flexible device based on PAN-PZT thin films by laser lift-off process

Abstract

The ferroelectric properties of flexible devices based on 0.05Pb(Al0.5Nb0.5)O-3-0.95Pb(Zr0.52Ti0.48)O-3 + 0.7 wt.%Nb2O5 + 0.5 wt.%MnO2 (PAN-PZT) thin films, which were fabricated using a laser lift-off (LLO) process, were investigated. The flexible devices based on PAN-PZT thin films were coated with a sacrificial layer, which prevented or minimized damage during LLO process. The structural and electrical properties of the PAN-PZT thin films before and after LLO process demonstrated that the crystallographic and ferroelectric properties of the device were retained after LLO process. Flexible devices based on PAN-PZT thin films coated with a sacrificial layer may be fabricated using the LLO process for the production of flexible electronic devices. (C) 2012 Elsevier B.V. All rights reserved.