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dc.contributor.authorKim, S. Y.-
dc.contributor.authorSong, J. D.-
dc.contributor.authorHan, I. K.-
dc.contributor.authorKim, T. W.-
dc.date.accessioned2024-01-20T14:31:34Z-
dc.date.available2024-01-20T14:31:34Z-
dc.date.created2021-09-05-
dc.date.issued2012-07-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/129089-
dc.description.abstractInP/InGaP quantum structures with 808-nm-wavelength emissions were grown on semi-insulating GaAs (100) substrates via migration-enhanced molecular beam epitaxy. The effects of the growth conditions on the structural and optical properties of the InP/InGaP quantum structures were investigated. The scanning electron microscopy and atomic force microscopy images showed that the two-dimensional InP/InGaP quantum structures were transited to one-dimensional structures with an increasing repetition cycle. The photoluminescence spectra showed that the optical properties of the InP/InGaP quantum structures were significantly affected by various migration-enhanced epitaxy repetition numbers and growth temperatures. These results can help improve understanding of the effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectDIODE-LASERS-
dc.subjectPOWER-
dc.subjectNM-
dc.titleEffects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength Emissions-
dc.typeArticle-
dc.identifier.doi10.1166/jnn.2012.6325-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5519 - 5522-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume12-
dc.citation.number7-
dc.citation.startPage5519-
dc.citation.endPage5522-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000307604700071-
dc.identifier.scopusid2-s2.0-84865129049-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusDIODE-LASERS-
dc.subject.keywordPlusPOWER-
dc.subject.keywordPlusNM-
dc.subject.keywordAuthorInP/InGaP Quantum Structure-
dc.subject.keywordAuthorQuantum Dash-
dc.subject.keywordAuthor808-nm-
dc.subject.keywordAuthorMEE-
dc.subject.keywordAuthorMBE-
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