DSpace at KIST: Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide

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DC Field	Value	Language
dc.contributor.author	김용태	-
dc.contributor.author	강이구	-
dc.date.accessioned	2024-01-20T15:04:58Z	-
dc.date.available	2024-01-20T15:04:58Z	-
dc.date.created	2022-01-10	-
dc.date.issued	2012-03	-
dc.identifier.issn	1742-6588	-
dc.identifier.uri	https://pubs.kist.re.kr/handle/201004/129443	-
dc.publisher	Institute of Physics	-
dc.title	Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide	-
dc.type	Article	-
dc.description.journalClass	1	-
dc.identifier.bibliographicCitation	Journal of Physics: Conference Series, v.352, pp.012025-1 - 012025-8	-
dc.citation.title	Journal of Physics: Conference Series	-
dc.citation.volume	352	-
dc.citation.startPage	012025-1	-
dc.citation.endPage	012025-8	-
dc.description.journalRegisteredClass	scopus	-
dc.subject.keywordAuthor	Power MOSFET	-
dc.subject.keywordAuthor	Circuit design	-
dc.subject.keywordAuthor	GaN	-
dc.subject.keywordAuthor	Al2O3 gate	-

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