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Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide

Authors

김용태; 강이구

Issue Date

2012-03

Publisher

Institute of Physics

Citation

Journal of Physics: Conference Series, v.352, pp.012025-1 - 012025-8

Keywords

Power MOSFET; Circuit design; GaN; Al2O3 gate

ISSN

1742-6588

URI

https://pubs.kist.re.kr/handle/201004/129443

Appears in Collections:

KIST Article > 2012

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