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dc.contributor.authorChoi, Gyung-Min-
dc.contributor.authorMin, Byoung-Chul-
dc.contributor.authorShin, Kyung-Ho-
dc.date.accessioned2024-01-20T15:05:14Z-
dc.date.available2024-01-20T15:05:14Z-
dc.date.created2021-09-05-
dc.date.issued2012-03-
dc.identifier.issn0018-9464-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/129455-
dc.description.abstractWe have fabricated perpendicular magnetic tunnel junctions consisting of hcp Ru underlayer/hcp CoPt alloy/CoFeB/MgO/CoFeB/CoPt alloy (or Co)/Pt capping layer. By inserting the CoPt alloy (or Co) between the CoFeB and Pt capping layers, it is possible to increase a perpendicular magnetic anisotropy of the top electrode. Using a top electrode of Co40Fe40B20(0.4 nm)nm/Co72Pt28(1.6 nm)/Pt, we have obtained an effective magnetic anisotropy of 3.3 x 10(6) crg/cm(3) and a tunnel magnetoresistance (TMR) of 9.4%. The analysis of the crystal structure reveals that the low TMR is a consequence of the fcc (111) texture of CoFeB layers.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titlePerpendicular Magnetic Tunnel Junctions Having CoFeB/CoPt Alloy Layers-
dc.typeArticle-
dc.identifier.doi10.1109/TMAG.2011.2176744-
dc.description.journalClass1-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON MAGNETICS, v.48, no.3, pp.1130 - 1133-
dc.citation.titleIEEE TRANSACTIONS ON MAGNETICS-
dc.citation.volume48-
dc.citation.number3-
dc.citation.startPage1130-
dc.citation.endPage1133-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000301199300005-
dc.identifier.scopusid2-s2.0-84858110497-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusELECTRODES-
dc.subject.keywordPlusANISOTROPY-
dc.subject.keywordPlusBARRIER-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordAuthorMagnetic tunnel junctions (MTJs)-
dc.subject.keywordAuthorperpendicular magnetic anisotropy (PMA)-
dc.subject.keywordAuthortunnel magnetoresistance (TMR)-
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