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dc.contributor.authorKang, Dae-Hwan-
dc.contributor.authorKim, Nan Young-
dc.contributor.authorJeong, Hongsik-
dc.contributor.authorCheong, Byung-ki-
dc.date.accessioned2024-01-20T15:31:28Z-
dc.date.available2024-01-20T15:31:28Z-
dc.date.created2021-09-05-
dc.date.issued2012-02-06-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/129550-
dc.description.abstractWe experimentally demonstrate that the crystallization process of Ge-Sb-Te crystallites during the set operation in non-volatile phase change memory commences after threshold switching event. It is also shown that the nucleation and growth rates have opposite behaviors with the increase of set operation power: the incubation time in nucleation stage can be minimized at higher power, whereas the percolation time in growth stage is smaller at lower power. Based on these results, we introduce a two-step set pulse of high-power nucleation and low-power growth making the set write operation much faster than conventional simple rectangular or slow-quenched form. (C) 2012 American Institute of Physics. [doi:10.1063/1.3684245]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleUnderstanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory-
dc.typeArticle-
dc.identifier.doi10.1063/1.3684245-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.100, no.6-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume100-
dc.citation.number6-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000300214000095-
dc.identifier.scopusid2-s2.0-84857213920-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordAuthorphase change memory-
dc.subject.keywordAuthorcrystallization-
dc.subject.keywordAuthorset operation-
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