Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy
- Authors
- Shon, Yoon; Lee, Sejoon; Yoon, Im Taek; Jeon, H. C.; Lee, D. J.; Kang, T. W.; Song, J. D.; Yoon, Chong S.; Kim, D. Y.; Park, C. S.
- Issue Date
- 2011-11-07
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.99, no.19
- Abstract
- The p-type InMnP: Be epilayers were prepared by the sequential growth of Mn/InP: Be bilayers using molecular-beam-epitaxy and the subsequent in-situ annealing at 200-300 degrees C. In triple-axis x-ray diffraction patterns, the samples revealed a shoulder peak indicative of intrinsic InMnP. The ferromagnetic transition in InMnP: Be was observed to occur at the elevated temperature of similar to 140 K, and the ferromagnetic spin-domains clearly appeared in magnetic force microscopy images. The improved ferromagnetic properties are attributed to the increased p-d hybridation due to high p-type conductivity of InMnP: Be (p similar to 10(20) cm(-3)). The results suggest that enhanced ferromagnetism can be effectively obtained from Be-codoped InMnP. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3660274]
- Keywords
- NEUTRAL MANGANESE ACCEPTOR; INP; MN; SEMICONDUCTORS; NEUTRAL MANGANESE ACCEPTOR; INP; MN; SEMICONDUCTORS; InMnP; molecular beam epitaxy; ferromagnetism
- ISSN
- 0003-6951
- URI
- https://pubs.kist.re.kr/handle/201004/129809
- DOI
- 10.1063/1.3660274
- Appears in Collections:
- KIST Article > 2011
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