Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yeo, Inah | - |
dc.contributor.author | Song, Jin Dong | - |
dc.contributor.author | Lee, Jungil | - |
dc.date.accessioned | 2024-01-20T16:03:43Z | - |
dc.date.available | 2024-01-20T16:03:43Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2011-10-10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/129895 | - |
dc.description.abstract | We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In0.2Ga0.8As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651492] | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | GAAS | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | ARSENIDE | - |
dc.title | Temperature-dependent energy band gap variation in self-organized InAs quantum dots | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3651492 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.99, no.15 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 99 | - |
dc.citation.number | 15 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000295883800028 | - |
dc.identifier.scopusid | 2-s2.0-80054986155 | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | ARSENIDE | - |
dc.subject.keywordAuthor | energy gap | - |
dc.subject.keywordAuthor | gallium arsenide | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | molecular beam epitaxial growth | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | semiconductor quantum dots | - |
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