DSpace at KISTKIST Article2011

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dc.contributor.authorKim, Chang Young-
dc.contributor.authorNavamathavan, R.-
dc.contributor.authorLee, Heang Seuk-
dc.contributor.authorWoo, Jong-Kwan-
dc.contributor.authorHyun, Myung Taek-
dc.contributor.authorLee, Kwang-Man-
dc.contributor.authorJeung, Won Young-
dc.contributor.authorChoi, Chi Kyu-
dc.date.accessioned2024-01-20T16:32:28Z-
dc.date.available2024-01-20T16:32:28Z-
dc.date.created2021-09-05-
dc.date.issued2011-08-01-
dc.identifier.issn0040-6090-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130089-
dc.description.abstractLow-dielectric constant SiOC(-H) films were deposited on p-type Si(100) substrates by plasma-enhanced chemical-vapor deposition (PECVD) using dimethyldimethoxy silane (DMDMS, C4H12O2Si) and oxygen gas as precursors. To improve the physicochemical properties of the SiOC(-H) films, the deposited SiOC(- H) films were exposed to ultraviolet (UV) irradiation in a vacuum. The bonding structure of the SiOC(-H) films was investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). The electrical characterization of SiOC(- H) films were carried out through I-V measurements using the comb-like patterns of the TiN/Al/Ti/SiOC(H)/TiN/Al/Ti metal-insulator-metal (MIM) structure. Excessive UV treatment adversely affected the SiOC(-H) film, which resulted in an increased dielectric constant. Our results provide insight into the UV irradiation of low-k SiOC(-H) films. (C) 2011 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE SA-
dc.subjectCHEMICAL-VAPOR-DEPOSITION-
dc.subjectULTRALOW-K DIELECTRICS-
dc.subjectTHIN-FILMS-
dc.subjectPECVD-
dc.subjectINTERCONNECTS-
dc.titleUltraviolet irradiation effect on the properties of leakage current and dielectric breakdown of low-dielectric-constant SiOC(-H) films using comb capacitor structure-
dc.typeArticle-
dc.identifier.doi10.1016/j.tsf.2011.04.058-
dc.description.journalClass1-
dc.identifier.bibliographicCitationTHIN SOLID FILMS, v.519, no.20, pp.6732 - 6736-
dc.citation.titleTHIN SOLID FILMS-
dc.citation.volume519-
dc.citation.number20-
dc.citation.startPage6732-
dc.citation.endPage6736-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000294790900021-
dc.identifier.scopusid2-s2.0-80051551732-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusCHEMICAL-VAPOR-DEPOSITION-
dc.subject.keywordPlusULTRALOW-K DIELECTRICS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusPECVD-
dc.subject.keywordPlusINTERCONNECTS-
dc.subject.keywordAuthorLow-k materials-
dc.subject.keywordAuthorSiOC(-H) film-
dc.subject.keywordAuthorPECVD-
dc.subject.keywordAuthorUV irradiation-
dc.subject.keywordAuthorFTIR-
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