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dc.contributor.authorKang, Gil Bum-
dc.contributor.authorKwon, Soon-Mook-
dc.contributor.authorKim, Young Hwan-
dc.contributor.authorKim, Yong Tae-
dc.contributor.authorSohn, Young-Soo-
dc.date.accessioned2024-01-20T16:33:37Z-
dc.date.available2024-01-20T16:33:37Z-
dc.date.created2021-09-04-
dc.date.issued2011-08-
dc.identifier.issn1555-130X-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130148-
dc.description.abstractA field effect transistor (FET) biosensor with a trimmed silicon nanowire (SiNW) structure was designed, fabricated, and characterized for the selective and real-time detection of the prostate-specific antigen (PSA), a biomarker for diagnosing prostate cancer. The SiNW FET was fabricated using only top-down CMOS process techniques, including photoresist trimming. To detect PSA, the SiNW surface was modified with an antibody of PSA (anti-PSA). The sensing of PSA then occured via real-time conductance changes of the SiNW. The output response of the SiNW FET biosensor was linearly related to the PSA concentration within a range of 50 pg/ml and 500 pg/ml. When investigating the selectivity, the SiNW modified to detect PSA did not respond to the C-reactive protein (CRP). Thus, the results demonstrated the feasibility of the proposed biosensor for diagnosing prostate cancer.-
dc.languageEnglish-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.subjectSENSOR-
dc.subjectIMMUNOASSAY-
dc.subjectBIOSENSOR-
dc.titleSensing of Prostate-Specific Antigen Using Trimmed Silicon Nanowire Field Effect Transistors-
dc.typeArticle-
dc.identifier.doi10.1166/jno.2011.1179-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.6, no.3, pp.330 - 333-
dc.citation.titleJOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS-
dc.citation.volume6-
dc.citation.number3-
dc.citation.startPage330-
dc.citation.endPage333-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000299583000025-
dc.identifier.scopusid2-s2.0-84863136509-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle; Proceedings Paper-
dc.subject.keywordPlusSENSOR-
dc.subject.keywordPlusIMMUNOASSAY-
dc.subject.keywordPlusBIOSENSOR-
dc.subject.keywordAuthorField Effect Transistor-
dc.subject.keywordAuthorSilicon Nanowire-
dc.subject.keywordAuthorProstate-Specific Antigen-
dc.subject.keywordAuthorTop-Down CMOS Process-
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