Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kang, Gil Bum | - |
dc.contributor.author | Kwon, Soon-Mook | - |
dc.contributor.author | Kim, Young Hwan | - |
dc.contributor.author | Kim, Yong Tae | - |
dc.contributor.author | Sohn, Young-Soo | - |
dc.date.accessioned | 2024-01-20T16:33:37Z | - |
dc.date.available | 2024-01-20T16:33:37Z | - |
dc.date.created | 2021-09-04 | - |
dc.date.issued | 2011-08 | - |
dc.identifier.issn | 1555-130X | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/130148 | - |
dc.description.abstract | A field effect transistor (FET) biosensor with a trimmed silicon nanowire (SiNW) structure was designed, fabricated, and characterized for the selective and real-time detection of the prostate-specific antigen (PSA), a biomarker for diagnosing prostate cancer. The SiNW FET was fabricated using only top-down CMOS process techniques, including photoresist trimming. To detect PSA, the SiNW surface was modified with an antibody of PSA (anti-PSA). The sensing of PSA then occured via real-time conductance changes of the SiNW. The output response of the SiNW FET biosensor was linearly related to the PSA concentration within a range of 50 pg/ml and 500 pg/ml. When investigating the selectivity, the SiNW modified to detect PSA did not respond to the C-reactive protein (CRP). Thus, the results demonstrated the feasibility of the proposed biosensor for diagnosing prostate cancer. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | SENSOR | - |
dc.subject | IMMUNOASSAY | - |
dc.subject | BIOSENSOR | - |
dc.title | Sensing of Prostate-Specific Antigen Using Trimmed Silicon Nanowire Field Effect Transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jno.2011.1179 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.6, no.3, pp.330 - 333 | - |
dc.citation.title | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 330 | - |
dc.citation.endPage | 333 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000299583000025 | - |
dc.identifier.scopusid | 2-s2.0-84863136509 | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | IMMUNOASSAY | - |
dc.subject.keywordPlus | BIOSENSOR | - |
dc.subject.keywordAuthor | Field Effect Transistor | - |
dc.subject.keywordAuthor | Silicon Nanowire | - |
dc.subject.keywordAuthor | Prostate-Specific Antigen | - |
dc.subject.keywordAuthor | Top-Down CMOS Process | - |
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