Combinatorial growth of Si nanoribbons

Authors
Park, Tae-EonLee, Ki-YoungKim, IlsooChang, JoonyeonVoorhees, PeterChoi, Heon-Jin
Issue Date
2011-07-27
Publisher
SPRINGER
Citation
NANOSCALE RESEARCH LETTERS, v.6
Abstract
Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twin-assisted VS mechanism for lateral growth.
Keywords
SILICON NANOWIRES; NANOBELTS; NANOCRYSTALS; MECHANISM; DIRECTION; RIBBONS; SILICON NANOWIRES; NANOBELTS; NANOCRYSTALS; MECHANISM; DIRECTION; RIBBONS
ISSN
1931-7573
URI
https://pubs.kist.re.kr/handle/201004/130169
DOI
10.1186/1556-276X-6-476
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KIST Article > 2011
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