DSpace at KISTKIST Article2011

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dc.contributor.authorYang, Min Kyu-
dc.contributor.authorPark, Jae-Wan-
dc.contributor.authorChoi, Sun Young-
dc.contributor.authorLee, Jeon-Kook-
dc.date.accessioned2024-01-20T17:01:32Z-
dc.date.available2024-01-20T17:01:32Z-
dc.date.created2021-09-05-
dc.date.issued2011-06-
dc.identifier.issn1229-9162-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130299-
dc.description.abstractCr-doped SrZrO3 perovskite thin films were deposited on SrRuO3 bottom electrode/SiO2/Si(100) substrates by pulsed laser deposition. The SrZrO3 : Cr perovskite and SrRuO3 bottom electrode showed a well controlled interface, as well as good resistive switching behavior with an ON/OFF ratio > 10(3). Resistive switching memory devices made from Cr-doped SrZrO3 thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.-
dc.languageEnglish-
dc.publisherKOREAN ASSOC CRYSTAL GROWTH, INC-
dc.subjectMEMORY-
dc.titleDeposition of Cr-doped SrZrO3 thin films on Si substrates and their resistance switching characteristics-
dc.typeArticle-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF CERAMIC PROCESSING RESEARCH, v.12, no.3, pp.233 - 235-
dc.citation.titleJOURNAL OF CERAMIC PROCESSING RESEARCH-
dc.citation.volume12-
dc.citation.number3-
dc.citation.startPage233-
dc.citation.endPage235-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.wosid000292667100003-
dc.identifier.scopusid2-s2.0-79961000130-
dc.relation.journalWebOfScienceCategoryMaterials Science, Ceramics-
dc.relation.journalResearchAreaMaterials Science-
dc.type.docTypeArticle-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordAuthorResistive switching-
dc.subject.keywordAuthorSrZrO3-
dc.subject.keywordAuthorNon-volatility memory-
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