Optical Characterization of the Excitonic States in Low-density Droplet GaAs Quantum Dots for Single Photon Sources

Abstract

Low-density (similar to 3.5 x 10(9) cm(-2)) GaAs quantum clots intended for single photon source application were grown between Al(0.3)Ga(0.7)As barriers by using droplet epitaxy. This material system has an emitting wavelength compatible with cost-effective Si-based detectors. Excitation-power-dependent and time-resolved micro-photoluminescence measurements were performed at low temperature (7 K) to characterize the optical properties of the excitonic states, which are attributed to good quantum confinement in the GaAs quantum dots.