DSpace at KISTKIST Article2011

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dc.contributor.authorJeong, Doo Seok-
dc.contributor.authorPark, Goon-Ho-
dc.contributor.authorLim, Hyungkwang-
dc.contributor.authorHwang, Cheol Seong-
dc.contributor.authorLee, Suyoun-
dc.contributor.authorCheong, Byung-ki-
dc.date.accessioned2024-01-20T17:32:30Z-
dc.date.available2024-01-20T17:32:30Z-
dc.date.created2021-09-02-
dc.date.issued2011-03-
dc.identifier.issn0947-8396-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130597-
dc.description.abstractThe dc electric conduction behavior of amorphous GeSe films sandwiched between the Pt bottom electrode and various counter electrodes (Pt, Cr, and Ti) was examined in a voltage as well as a time domain. The time domain investigation identified time-dependent resistance change and relaxation. The voltage domain analysis revealed that the current transport in these metal-insulator-metal junctions is probably attributed to bulk-limited band-conduction due to delocalized charge carriers.-
dc.languageEnglish-
dc.publisherSPRINGER HEIDELBERG-
dc.subjectLEAKAGE CURRENTS-
dc.subjectAC CONDUCTION-
dc.subjectCHALCOGENIDE-
dc.subjectDEPENDENCE-
dc.subjectTEMPERATURE-
dc.subjectMODEL-
dc.titleDc current transport behavior in amorphous GeSe films-
dc.typeArticle-
dc.identifier.doi10.1007/s00339-011-6283-6-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.102, no.4, pp.1027 - 1032-
dc.citation.titleAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING-
dc.citation.volume102-
dc.citation.number4-
dc.citation.startPage1027-
dc.citation.endPage1032-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000288253600035-
dc.identifier.scopusid2-s2.0-79959342890-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusLEAKAGE CURRENTS-
dc.subject.keywordPlusAC CONDUCTION-
dc.subject.keywordPlusCHALCOGENIDE-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusMODEL-
dc.subject.keywordAuthorchalcogenide-
dc.subject.keywordAuthordc conductivity-
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