Overview on the Resistive Switching in TiO2 Solid Electrolyte

Abstract

The resistance switching behavior of several oxide thin-film materials recently attracted great interest in semiconductor memory devices as a nonvolatile memory element, popularly described as Resistive Random Access Memory (RRAM). This switching in various transition metal oxides and ferroelectric/multiferroic oxides could form the basis for next-generation non-volatile memory, when the current semiconductor memory technology reaches its limit in terms of the density. The basic focus of this review is to examine resistive switching and mechanisms for such behavior in TiO2; the system initially attracted attention globally and has been widely studied. The present paper gives an overview on the suggested mechanism for the resistive switching in TiO2 solid electrolytes and addresses the current understanding of this system. The review ends with some open questions about the mechanism and current status of TiO2 as a candidate for RRAM in terms of stability and scalability.