Field-emission properties of patterned ZnO nanowires on 2.5D MEMS substrate

Authors
Park, Seung-BeumKim, Byeong-GukKim, Jeong-YeonJung, Tae-HwanLim, Dong-GunPark, Jae-HwanPark, Jae-Gwan
Issue Date
2011-01
Publisher
SPRINGER
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.102, no.1, pp.169 - 172
Abstract
We fabricated a nanowire-based field-emission display (FED) device on a 2.5D substrate using a photolithography, lift-off, thermal-evaporation, and plasma-etching process. We first fabricated a 3x3 array of microholes (diameter = 400 mu m and depth = 50 mu m) on a Si substrate and fabricated ZnO nanowires inside the microholes by using a thermal CVD process. The field-emission pattern image of the 3x3 array of microholes was clearly apparent. The threshold emission field was ca. 5.6 V/mu m and we obtained considerable brightness when the applied voltage was 1900 V (i.e. 6.3 V/mu m). Because the fabrication processes used in this study are standard semiconductor fabrication routes, the study suggests the feasibility of mass producing a nanowire-based FED device.
Keywords
OXIDE NANOWIRES; ARRAYS; CO; OXIDE NANOWIRES; ARRAYS; CO; ZnO; nanowire; field emission; FED
ISSN
0947-8396
URI
https://pubs.kist.re.kr/handle/201004/130806
DOI
10.1007/s00339-010-5981-9
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KIST Article > 2011
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