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dc.contributor.authorChoi, Gyung-Min-
dc.contributor.authorMin, Byoung-Chul-
dc.contributor.authorShin, Kyung-Ho-
dc.date.accessioned2024-01-20T18:30:26Z-
dc.date.available2024-01-20T18:30:26Z-
dc.date.created2021-09-05-
dc.date.issued2010-11-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/130969-
dc.description.abstractWe have investigated the feasibility of using FePdB alloy layers for perpendicular magnetic tunnel junctions (p-MTJs). The perpendicular magnetic anisotropy (PMA) of FePdB films is obtained by depositing amorphous Fe40Pd40B20 layers on proper templates and by postannealing. An FePdB film on a thick Pt (001) underlayer has a PMA energy (K-u) of 4.9 x 10(6) erg/cm(3), and an FePdB layer sandwiched by two thin MgO (001) layers shows a K-u of 3.7 x 10(6) erg/ cm(3). A double barrier p-MTJ with an FePdB middle layer shows a tunnel magnetoresistance of 6.8%. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517482]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.titleFePdB layer for perpendicular magnetic tunnel junctions-
dc.typeArticle-
dc.identifier.doi10.1063/1.3517482-
dc.description.journalClass1-
dc.identifier.bibliographicCitationAPPLIED PHYSICS LETTERS, v.97, no.20-
dc.citation.titleAPPLIED PHYSICS LETTERS-
dc.citation.volume97-
dc.citation.number20-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000284545200036-
dc.identifier.scopusid2-s2.0-78649292870-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusMAGNETORESISTANCE-
dc.subject.keywordPlusANISOTROPY-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthormagnetic tunnel junction-
dc.subject.keywordAuthorperpendicular magnetic anisotropy-
dc.subject.keywordAuthortunnel magnetoresistance-
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