DSpace at KISTKIST Article2010

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dc.contributor.authorCho, N. K.-
dc.contributor.authorKim, K. W.-
dc.contributor.authorSong, J. D.-
dc.contributor.authorChoi, W. J.-
dc.contributor.authorLee, J. I.-
dc.date.accessioned2024-01-20T18:32:07Z-
dc.date.available2024-01-20T18:32:07Z-
dc.date.created2021-09-05-
dc.date.issued2010-10-
dc.identifier.issn0038-1098-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/131050-
dc.description.abstractA distributed Bragg reflector (DBR) utilizing the digital alloy Al0.9Ga0.1As was grown by using the molecular beam epitaxy (MBE) method for application in 1.3 mu m optical communications and compared to the analog-alloy AlGaAs/GaAs DBR. The transmission electron microscopic (TEM) image showed a highly abrupt boundary of AlAs and GaAs, which supports the formation of a digital-alloy Al0.9Ga0.1As layer. The measurement showed that the digital-alloy AlGaAs/GaAs DBR had similar reflection spectra with enhanced uniform distribution over the whole substrate surface compared to the analog-alloy one. In the digital-alloy Al0.9Ga0.1As/GaAs DBR cavity, the reflection dip position was measured at around 1273 nm and the standard deviation of the distribution of the reflection dip was 1.31 nm in wavelength over 1/4 of a three-inch wafer. (C) 2010 Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectMOLECULAR-BEAM EPITAXY-
dc.subjectQUANTUM-DOT LASER-
dc.subjectMULTIQUANTUM WELLS-
dc.subjectOPTICAL-PROPERTIES-
dc.subjectMBE GROWTH-
dc.subjectGAAS-
dc.subjectCONFINEMENT-
dc.subject1.3-MU-M-
dc.subjectWAFER-
dc.titleA digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 mu m surface emitting laser diodes-
dc.typeArticle-
dc.identifier.doi10.1016/j.ssc.2010.05.010-
dc.description.journalClass1-
dc.identifier.bibliographicCitationSOLID STATE COMMUNICATIONS, v.150, no.39-40, pp.1955 - 1958-
dc.citation.titleSOLID STATE COMMUNICATIONS-
dc.citation.volume150-
dc.citation.number39-40-
dc.citation.startPage1955-
dc.citation.endPage1958-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000282157000023-
dc.identifier.scopusid2-s2.0-77957349999-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusMOLECULAR-BEAM EPITAXY-
dc.subject.keywordPlusQUANTUM-DOT LASER-
dc.subject.keywordPlusMULTIQUANTUM WELLS-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusMBE GROWTH-
dc.subject.keywordPlusGAAS-
dc.subject.keywordPlusCONFINEMENT-
dc.subject.keywordPlus1.3-MU-M-
dc.subject.keywordPlusWAFER-
dc.subject.keywordAuthorThin films-
dc.subject.keywordAuthorEpitaxy-
dc.subject.keywordAuthorOptical properties-
dc.subject.keywordAuthorLight absorption and reflection-
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