Amorphous silicon-indium-zinc oxide semiconductor thin film transistors processed below 150 degrees C

Abstract

Amorphous silicon indium zinc oxide (a-SIZO) thin film transistor (TFT) was investigated with the process temperature below 150 degrees C. The a-SIZO TFT exhibited a field effect mobility of 21.6 cm(2)/V s and an on/off ratio of 10(7). The stabilities of a-SIZO TFT and indium zinc oxide (IZO) TFT were compared, and a-SIZO TFT showed 3.7 V shift for threshold voltage (V(th)) compared to 10.8 V shift in IZO TFT after bias temperature stress. Si incorporation into IZO-system as a stabilizer, which was confirmed by x-ray photoelectron spectroscopy, resulted in small shift in Vth in a-SIZO TFT without deteriorating mobility of higher than 21.6 cm(2)/V s. (C) 2010 American Institute of Physics. [doi:10.1063/1.3479925]