Full metadata record
DC Field | Value | Language |
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dc.contributor.author | Kim, Gyu-Mi | - |
dc.contributor.author | Cho, Gyung-Sun | - |
dc.contributor.author | Lim, Dea-Soon | - |
dc.contributor.author | Park, Sang-Whan | - |
dc.date.accessioned | 2024-01-20T19:04:32Z | - |
dc.date.available | 2024-01-20T19:04:32Z | - |
dc.date.created | 2021-09-02 | - |
dc.date.issued | 2010-06 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/131413 | - |
dc.description.abstract | Single phase beta-SiC powders were synthesized using SiO2/C hybrid precursors with and without the addition of metallic Si powders. The SiO2/C hybrid precursors with various C/Si mole ratios (1.6-4.0) were prepared by a sol-gel process using tetraethyl orthosilicate and phenol resin as starting materials. Fine beta-SiC powders were synthesized by the carbothermal reduction of the SiO2/C hybrid precursor with and without the addition of metallic Si powders in the temperature range between 1250 degrees C-1800 degrees C under a vacuum atmosphere. Single phase beta-SiC powders were obtained by the carbothermal reduction of the SiO2/C hybrid precursor with a C/Si mole ratio of 1.6 above 1600 degrees C under a vacuum atmosphere. It was found that the addition of metallic Si powders to the the SiO2/C hybrid precursor with excess carbon reduced the temperature for the synthesis of single phase beta-SiC powders to as low as 1350 degrees C. The particle sizes of synthesized beta-SiC powders from the metallic Si powder added SiO2/C hybrid precursor with excess carbon were less than 1 mu m, in which fine beta-SiC powders appeared to be slightly aggregated. | - |
dc.language | English | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.subject | SILICON-CARBIDE POWDERS | - |
dc.subject | CARBOTHERMAL REDUCTION | - |
dc.title | The effects of metallic Si addtions on the synthesis of beta-SiC powders using a sol-gel method | - |
dc.type | Article | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.11, no.3, pp.377 - 383 | - |
dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.volume | 11 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 377 | - |
dc.citation.endPage | 383 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.identifier.wosid | 000280125600020 | - |
dc.identifier.scopusid | 2-s2.0-77958157098 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | SILICON-CARBIDE POWDERS | - |
dc.subject.keywordPlus | CARBOTHERMAL REDUCTION | - |
dc.subject.keywordAuthor | Synthesis | - |
dc.subject.keywordAuthor | SiC powder | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | carbothermal | - |
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