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dc.contributor.authorLi, Bin-
dc.contributor.authorYoo, Jung-Woo-
dc.contributor.authorKao, Chi-Yueh-
dc.contributor.authorJang, Ho Won-
dc.contributor.authorEom, Chang-Beom-
dc.contributor.authorEpstein, Arthur J.-
dc.date.accessioned2024-01-20T19:04:58Z-
dc.date.available2024-01-20T19:04:58Z-
dc.date.created2021-09-01-
dc.date.issued2010-06-
dc.identifier.issn1566-1199-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/131434-
dc.description.abstractWe report a study of the electrical bistability and bias-controlled spin valve effect in an organic device using rubrene (C(42)H(28)) as an organic semiconductor channel. The half-metallic La(0.7)Sr(0.3)MnO(3) (LSMO) and Fe are used as the two ferromagnetic electrodes. The device displays reproducible switching between a low-impedance (ON) state and a high-impedance (OFF) state by applying different polarities of high biases. In the ON state, the device shows a spin valve effect with magnetoresistance values up to 3.75%. The observed spin valve effect disappears when the device recovers to the initial OFF state. (C) 2010 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.publisherELSEVIER SCIENCE BV-
dc.subjectROOM-TEMPERATURE-
dc.subjectLARGE MAGNETORESISTANCE-
dc.subjectORGANIC MATERIALS-
dc.subjectMEMORY ELEMENTS-
dc.subjectTHIN-FILMS-
dc.subjectDEVICES-
dc.subjectCELLS-
dc.titleElectrical bistability and spin valve effect in a ferromagnet/organic semiconductor/ferromagnet heterojunction-
dc.typeArticle-
dc.identifier.doi10.1016/j.orgel.2010.03.021-
dc.description.journalClass1-
dc.identifier.bibliographicCitationORGANIC ELECTRONICS, v.11, no.6, pp.1149 - 1153-
dc.citation.titleORGANIC ELECTRONICS-
dc.citation.volume11-
dc.citation.number6-
dc.citation.startPage1149-
dc.citation.endPage1153-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.identifier.wosid000277935200027-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusLARGE MAGNETORESISTANCE-
dc.subject.keywordPlusORGANIC MATERIALS-
dc.subject.keywordPlusMEMORY ELEMENTS-
dc.subject.keywordPlusTHIN-FILMS-
dc.subject.keywordPlusDEVICES-
dc.subject.keywordPlusCELLS-
dc.subject.keywordAuthorBistable device-
dc.subject.keywordAuthorSpin valve-
dc.subject.keywordAuthorOrganic semiconductor-
dc.subject.keywordAuthorMagnetoresistance-
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