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dc.contributor.authorBouzid, Abdessattar-
dc.contributor.authorPark, Jun-Bum-
dc.contributor.authorMoon, Sung-
dc.date.accessioned2024-01-20T19:31:39Z-
dc.date.available2024-01-20T19:31:39Z-
dc.date.created2021-09-02-
dc.date.issued2010-05-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/131521-
dc.description.abstractWe investigate the effects of the active hold-off technique in single-photon detector (SPD) based on InGaAs/InP avalanche photodiodes (APDs). The concept of this technique is to hold-off an appropriate number of gate pulses after each recorded detection in order to wait for the trapping levels to empty. We found that at almost a 1-MHz repetition rate of the gate, such a hold-off mechanism must block at least two gate pulses after each photon click event to reduce the after-pulsing effect and does not significantly affect the count probability per gate. For higher repetition frequencies, the number of hold-off gates must be increased.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectQUANTUM KEY DISTRIBUTION-
dc.subjectINGAAS/INP AVALANCHE PHOTODIODES-
dc.subjectUP-CONVERSION DETECTORS-
dc.subject1.55 MU-M-
dc.subjectHIGH-PERFORMANCE-
dc.subjectSYSTEM-
dc.subjectGHZ-
dc.titleEffects of the Active Hold-off Technique in 1.55-mu m Single-photon Detection-
dc.typeArticle-
dc.identifier.doi10.3938/jkps.56.1418-
dc.description.journalClass1-
dc.identifier.bibliographicCitationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.56, no.5, pp.1418 - 1422-
dc.citation.titleJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.citation.volume56-
dc.citation.number5-
dc.citation.startPage1418-
dc.citation.endPage1422-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001445311-
dc.identifier.wosid000277692200002-
dc.identifier.scopusid2-s2.0-77954856984-
dc.relation.journalWebOfScienceCategoryPhysics, Multidisciplinary-
dc.relation.journalResearchAreaPhysics-
dc.type.docTypeArticle-
dc.subject.keywordPlusQUANTUM KEY DISTRIBUTION-
dc.subject.keywordPlusINGAAS/INP AVALANCHE PHOTODIODES-
dc.subject.keywordPlusUP-CONVERSION DETECTORS-
dc.subject.keywordPlus1.55 MU-M-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordPlusGHZ-
dc.subject.keywordAuthorSingle-photon detector-
dc.subject.keywordAuthorInGaAs/InP avalanche photodiode-
dc.subject.keywordAuthorQuantum bit error rate-
dc.subject.keywordAuthorQuantum key distribution-
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KIST Article > 2010
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