Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

Abstract

The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (Delta R/R-0) decreases as the temperature increases. In each temperature, we calculated the injected polarization (eta) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T = 1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced. (C) 2009 Elsevier B.V. All rights reserved.