Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, W. K. | - |
dc.contributor.author | Park, H. C. | - |
dc.contributor.author | Angadi, B. | - |
dc.contributor.author | Jung, Y. S. | - |
dc.contributor.author | Choi, J. W. | - |
dc.date.accessioned | 2024-01-20T20:33:02Z | - |
dc.date.available | 2024-01-20T20:33:02Z | - |
dc.date.created | 2021-09-05 | - |
dc.date.issued | 2009-10 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | https://pubs.kist.re.kr/handle/201004/132077 | - |
dc.description.abstract | Negative thermal quenching (NTQ) was observed in bound exciton emission line in undoped ZnO and the donor-to-valence-band emission in heavily Ga-doped ZnO thin films grown on c-Al2O3 (1000) through low temperature photoluminescence spectra. In both cases, the enhanced feature of PL peak intensity occurred in the temperature range of 35-45 K corresponding to the energies of either excitation to the vibrational/rotational resonance states or the involvement of B-valence band considering the activation energy of about 5 meV. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | DONOR-ACCEPTOR | - |
dc.subject | BOUND-EXCITON | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | LUMINESCENCE | - |
dc.subject | TEMPERATURE | - |
dc.subject | EMISSION | - |
dc.subject | OXIDE | - |
dc.subject | BAND | - |
dc.title | Negative thermal quenching in undoped ZnO and Ga-doped ZnO film grown on c-Al2O3 (0001) by plasma-assisted molecular beam epitaxy | - |
dc.type | Article | - |
dc.identifier.doi | 10.1007/s10832-008-9450-1 | - |
dc.description.journalClass | 1 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTROCERAMICS, v.23, no.2-4, pp.331 - 334 | - |
dc.citation.title | JOURNAL OF ELECTROCERAMICS | - |
dc.citation.volume | 23 | - |
dc.citation.number | 2-4 | - |
dc.citation.startPage | 331 | - |
dc.citation.endPage | 334 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.identifier.wosid | 000271982300044 | - |
dc.identifier.scopusid | 2-s2.0-73449117569 | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.type.docType | Article | - |
dc.subject.keywordPlus | DONOR-ACCEPTOR | - |
dc.subject.keywordPlus | BOUND-EXCITON | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | LUMINESCENCE | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | BAND | - |
dc.subject.keywordAuthor | Negative thermal quenching | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Ga-doped ZnO | - |
dc.subject.keywordAuthor | B-valence band | - |
dc.subject.keywordAuthor | Vibrational/rotational resonance states | - |
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