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dc.contributor.author이득희-
dc.contributor.author김상식-
dc.contributor.author이상렬-
dc.contributor.author임재현-
dc.date.accessioned2024-01-20T20:35:10Z-
dc.date.available2024-01-20T20:35:10Z-
dc.date.created2021-09-06-
dc.date.issued2009-09-
dc.identifier.issn1226-7945-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/132182-
dc.description.abstractWe described the growth of undoped ZnO thin films and their optical properties changing with a various growth temperature. The undoped ZnO thin films were grown on c-Al2O3 substrates using pulsed laser deposition (PLD) at room temperature, 200, 400, and 600oC, respectively. Field emission microscopy (FE-SEM) measurements showed that the grain size of undoped ZnO thin films are increasing as a increase of growth temperature. In addition, we were investigated that the structural and optical properties of undoped ZnO thin films by x-ray diffraction (XRD) and photoluminescence (PL) studied. Also, we could confirmed that the exciton luminescence was strongly related to charge trap by grain boundary of the samples using micro-PL measurement.-
dc.languageKorean-
dc.publisher한국전기전자재료학회-
dc.title펄스 레이져 증착법으로 성장한 ZnO 박막의 마이크로 PL 특성 분석-
dc.title.alternativeInvestigation on the Micro-photoluminescence of ZnO Thin Films Grown by Pulsed Laser Deposition-
dc.typeArticle-
dc.description.journalClass2-
dc.identifier.bibliographicCitation전기전자재료학회논문지, v.22, no.9, pp.756 - 759-
dc.citation.title전기전자재료학회논문지-
dc.citation.volume22-
dc.citation.number9-
dc.citation.startPage756-
dc.citation.endPage759-
dc.description.journalRegisteredClasskci-
dc.identifier.kciidART001372593-
dc.subject.keywordAuthorZnO-
dc.subject.keywordAuthorOxide semiconductor-
dc.subject.keywordAuthorThin films-
dc.subject.keywordAuthorPulsed laser deposition-
dc.subject.keywordAuthorPhotoluminescence-
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KIST Article > 2009
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