A spin field effect transistor using stray magnetic fields

Abstract

A spin field effect transistor (spin-FET) using the stray magnetic field induced by ferromagnetic patterns is suggested. Spin polarized electrons are generated by the Zeeman splitting effect at source and selected spins are transmitted by the spin filtering effect at drain. Datta and Das spin transistor needs spin injection and detection in a ferromagnet-semiconductor hybrid junction. This new design has an advantage over the previous spin-FET concept by removing the current flowing at an interface between ferromagnetic metal and semiconductor channel. (C) 2009 Elsevier Ltd. All rights reserved.