Surface characterization of hydrophobic thin films deposited by inductively coupled and pulsed plasmas

Authors
Kim, YoungsooLee, Ji-HyeKim, Kang-JinLee, Yeonhee
Issue Date
2009-07
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.27, no.4, pp.900 - 906
Abstract
Different fluorocarbon thin films were deposited on Si substrates using a plasma-polymerization method. Fluorine-containing hydrophobic thin films were obtained by inductively coupled plasma (ICP) and pulsed plasma (PP) with a mixture of fluorocarbon precursors C2F6, C3F8, and c-C4F8 and the unsaturated hydrocarbons of C2H2. The influence on the fluorocarbon surfaces of the process parameters for plasma polymerization, including the gas ratio and the plasma power, were investigated under two plasma-polymerized techniques with different fluorocarbon gas precursors. The hydrophobic properties, surface morphologies, and chemical compositions were elucidated using water contact angle measurements, field emission-scanning electron microscope, x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and time-of-flight secondary ion mass spectrometry (TOF-SIMS). In this study, the ICP technique provides coarser grained films and more hydrophobic surfaces as well as a higher deposition rate compared to the PP technique. XPS, FT-IR, and TOF-SIMS analyses indicated that the ICP technique produced more fluorine-related functional groups, including CF2 and CF3, on the surface. From the curve-fitted XPS results, fluorocarbon films grown under ICP technique exhibited less degree of cross-linking and higher CF2 concentrations than those grown under PP technique.
Keywords
FLUOROCARBON FILMS; GLOW-DISCHARGE; POLYMERIZATION; POWER; POLYMERS; FLUOROCARBON FILMS; GLOW-DISCHARGE; POLYMERIZATION; POWER; POLYMERS; contact angle; elemental semiconductors; field emission; Fourier transform spectra; infrared spectra; organic compounds; plasma deposition; polymerisation; scanning electron microscopy; secondary ion mass spectra; silicon; surface morphology; thin films; time of flight spectra; X-ray photoelectron spectra
ISSN
0734-2101
URI
https://pubs.kist.re.kr/handle/201004/132380
DOI
10.1116/1.3136763
Appears in Collections:
KIST Article > 2009
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