Determination of Spin-Orbit Interaction in InAs Heterostructure

Abstract

Spin-orbit interaction (SOI) gives a useful tool to control spin precession in the semiconductor without external magnetic field. The Rashba effect induced by spin-orbit interaction enables to imagine the spin field effect transistor in which the resistance modulation is achieved by precession of spins moving in a channel. The oscillatory magnetoresistance was measured to determine SOI parameter of inverted type high electron mobility transistor structure where InAs quantum well is inserted to InAlAs/InGaAs barrier layer. The band structure and electron charge distribution of the structure was calculated using WinGreen simulator. Observed SOI parameters are large enough to produce high Rashba field of about a few Tesla. The magnitude of the SOI parameter is subject to change with the InAs quantum-well thickness.